AOL1412

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOL1412 uses advanced trench technology with
a monolithically integrated Schottky diode to provide VDS (V) = 30V
excellent RDS(ON),and low gate charge. This device is ID =85A (VGS = 10V)
suitable for use as a low side FET in SMPS, load RDS(ON) < 3.9mΩ (VGS = 10V)
switching and general purpose applications. Standard RDS(ON) < 4.6mΩ (VGS = 4.5V)
Product AOL1412 is Pb-free (meets ROHS & Sony
259 specifications). AOL1412L is a Green Product
ordering option. AOL1412 and AOL1412L are
UIS Tested
electrically identical.
Rg,Ciss,Coss,Crss Tested

TM
Ultra SO-8 Top View Fits SOIC8 D
footprint !
D
Bottom tab
G
connected to
S drain
S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
I
Continuous Drain TC=25°C 85
Current B TC=100°C ID 84 A
Pulsed Drain Current IDM 200
Continuous Drain TA=25°C 27
A
Current H TA=70°C IDSM 21
Avalanche Current C IAR 40 A
Repetitive avalanche energy L=0.3mH C EAR 240 mJ
TC=25°C 100
PD W
Power Dissipation B TC=100°C 50
TA=25°C 5
A PDSM W
Power Dissipation TA=70°C 3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 19.6 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 50 60 °C/W
C
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

Alpha & Omega Semiconductor, Ltd.

AOL1412

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=1mA, V GS=0V 30 V
VDS=24V, VGS=0V 0.008 0.1
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 9 20
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 0.1 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 200 A
VGS=10V, ID=20A 3.2 3.9
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.0 6.2
VGS=4.5V, ID=20A 3.8 4.6 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 112 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.5 V
IS Maximum Body-Diode Continuous Current 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6430 7716 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 756 pF
Crss Reverse Transfer Capacitance 352 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.9 1.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 96 115
Qg(4.5V) Total Gate Charge 44 53 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 17 nC
Qgd Gate Drain Charge 13 nC
tD(on) Turn-On DelayTime 17.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 10 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 56 ns
tf Turn-Off Fall Time 10.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 20 25 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 26 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
I. The maximum current rating is limited by bond-wires.
Rev1: June 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

180 30
10V 6V
VDS=5V
150 25
4.5V
120 20
ID (A)

125°

ID(A)
90 15
VGS=3.5V
60 10
25°C
30 5

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

5 2

ID=20A
Normalized On-Resistance

1.8
4 VGS=4.5V VGS=10V
1.6
RDS(ON) (mΩ)

VGS=4.5V
3 1.4
VGS=10V
1.2
2
1

1 0.8
0 5 10 15 20 25 30 0 30 60 90 120 150 180 210
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

10 1.0E+02

ID=20A 1.0E+01 125°C

8
1.0E+00 25°C
RDS(ON) (mΩ)

1.0E-01
IS (A)

6 125°C
1.0E-02

1.0E-03
4
1.0E-04
25°C
2 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 12000

10000
8
VDS=15V

Capacitance (pF)
8000 Ciss
ID=20A
VGS (Volts)

6
6000
4
4000
2 Crss
2000 Coss

0 0
0 20 40 60 80 100 0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
200
10µs
100.0 100µ 180 TJ(Max)=175°C
TC=25°C
1ms 160
ID (Amps)

10.0 RDS(ON)
Power (W)

limited 0.1s
10ms
140
1.0 DC
TJ(Max)=175°C
120
TC=25°C
0.1
100
0.0
80
0.1 1 10 100
0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TC+PDM.ZθJc .RθJc D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

RθJC=1.5°C/W
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

250 110
ID(A), Peak Avalanche Current

100

Power Dissipation (W)

200 90
TC=25°C 80
70
150
60
50
100 TC=150°C 40
30
50 20
10
0 0
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 0 25 50 75 100 125 150 175

Time in avalanche, tA (s) T CASE (°C)

Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

100
100

TJ(Max)=150°C
80
80 TA=25°C
Current rating ID(A)

60
Power (W)

60

40 40

20 20

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
T CASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)

10
In descending order
ZθJA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

0.1

D=Ton/T PD
0.01 TJ,PK=TA+PDM.ZθJA.RθJA
Ton
Single Pulse RθJA=60°C/W T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd.

AOL1412

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01
0.9
0.8 20A
1.0E-02
0.7 10A
VDS=24V
0.6
1.0E-03
VDS=12V
IR (A)

0.5

VSD(V)
0.4 5A
1.0E-04
0.3

1.0E-05 0.2
IS=1A
0.1
1.0E-06 0
0 50 100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs. Figure 18: Diode Forward voltage vs. Junction
Junction Temperature Temperature

70 8 25 3
di/dt=800A/us
di/dt=800A/us 125ºC
60 2.5
20 125ºC
7
50
25ºC trr 2
Qrr 15 25ºC
Qrr (nC)

40
Irm (A)

trr (ns)

125ºC 6 1.5

S
30 10 125ºC
S 1
20
Irm 5
25ºC 5
10 0.5
25ºC

0 4 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Is (A) Is (A)
Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and
Peak Current vs. Conduction Current Soft Coefficient vs. Conduction Current

60 8 35 3
125ºC Is=20A
7
50 Is=20A 25ºC 30
6
40 125ºC 25 125ºC
5 2
25ºC 25ºC
Qrr (nC)

Irm (A)

20
trr (ns)

30 4 25ºC
S

Qrr 15 trr
3
20
1
2 10 S
10 125ºC
1
Irm 5
0 0
0 200 400 600 800 1000 0 0
0 200 400 600 800 1000
di/dt (A)
di/dt (A)
Figure 21: Diode Reverse Recovery Charge and
Figure 22: Diode Reverse Recovery Time and Soft
Peak Current vs. di/dt
Coefficient vs. di/dt

Alpha & Omega Semiconductor, Ltd.