Chopte EIECTRONS

ElectionicS is the bianch of ciene which daals

with the study of fow cal cortol of electrorss ard
t e behaviour and effats in vaccm,nes and in
Semiconducti s.

Solicd
ohd s a smpe of matter ín which mokcues
ave closed packly with chemcal bonds and
whOse

Size and shape ane relertivehy 3table.

Enagy Band:
ot elections inthe ouimast
The etot enemy evels
orbit of an atom na eolid iS call enetgy barnd

Valence Borrd
The onegy bond which s tmed
ees tf Corndluction Band
by -the set of enengg
the valepeigt e vaena ckctons for biclder
fs lled valece bnd. CHap
Carduction Baud: Vaiince bond
he erer91 band whch
is tomes

the set of eletragy levelaf

y oalled
decthors s
the Aire
Conducticn band

.
-Houbidden vd:
The ctiengy gap which is picxT betwetr) valene
lard avd Ctnduction band is aled tulidcen ba

1nsuato6 oidder
he substares which do not
alow the {lowof ceathicaunerit er
eve
thcugh thiem ave alel olere b d
Bulat01S.

Corductors
The Substances whicth ensiy
Corcluchion iord
allow the fbw ot eectic
Gurerrtthrough then ane
Yoer ce bond
Called Corductors.

SapLouductos
he abstonaas whoae eectnal
anductvity kics in betueenorcuction bard
ConcuctorS and maulertors ev erní
ere
ae aled Saricohduc tors. Vealchce boncd
fers level:
em evel bte Hghest ed
in e cclectio) tt eegy Cvalen bond
levets of ekchons msolas
at absclusc zao J
tCmpercituie.
IntrinsiC Semicoductors
hc senicotuctor which i3 in
cxlicmely puc
Jom 1s alla irtrinsIc Semicornductor.
Cc: Ciystalline tovm ot
put liao) and Germarium

Fie abnc of ekcion at a paticular plhce nan

Cto is allkc os hole.
Band
Electhons revolve gnound the nuceus at defived
eneicy levels colled boncds.

Coping:
The poccs5 of adcding impuTties toatminductor
s aled ooping
Extiraic Senicorguctor
The puc Seicorductradded byn 5mall amaurt
of Gurtable împurtuy is calcd extrinsic semíconducth
The aC oftwotypes:

n-type Semicondustors:
The tpe of senhcorouctor frmed nhen a small
aour of penta vakrrt mpuity s added 10
a pie eni onductor 15 caled type

sci conclucttr. mti»ts xes air fewrel and

1CVe in the nolceuE md hon |Siive Ct1crCn.
 Jn n-tyPe Semicorductor5, free
eClc
elcctions the nojovty
aue

aiers whstle holes ant

oiro fty arriers.

p-type enicorductois
The tpe of seniconductor
smallamourt hole
tomed when a

oftrialert mpurty 1
addad to a puie Sci
conductrS s.CEa a9 G
P-tupe tamiconduc

In apatYPG SEmion dudtor

hocs ale the majorit aiels Wkik elkcton3 are the

niroity cameis.
p-h junchan dliae
The mtrlaa tomed nhen a

ptyp seiCorductor is (Oine ur

t0 he n-type Smiarductor
19 called Pn junctio
Gienerally a pn junction 5
:
ivimed bay dopiu 19 a shingk
Semiconductor Cystalbu
Surtable dopat5.
tkctions fo n- type diffuses to p type onc
hoes Hiomp p-typo dhffusas to n-type Wherna
ertain number of hkocrtive arol postive lon oes ae

left on ethersíole of the jurction,fui thor dfuson s

peventcc becausc negative charge on p-sicle repels tice
eechons to entcr p-Side fom n-side and positive
n-side repes hols to cnter n-sic tom
chavge orn

p-6de. Thus c baitiCr 15 Belup against 0vEnerst

t cection5 and hoes. This reqio n is cclled dapletion
legion bea use chage cariers have becn dleplettd
in hs region. A p-runcion dioce alons the elbctic
Curvet în ony one divectiCn and blocks in ievei5e
civection.
çlicde
Biasing Df p-n Lurction
extcrnal voltage to a
The pioces5 f afplyng
p-njunction aemiconductor dioce is calkd biasna
ornaid bias:
Basing thu junction in idh Pype n-type
Unbaascd
the otnal
a divecti0nthat
aarces ve pPctertial
vo tage
barier ond pemrts t e
Currcot f cw 5 alled p p e V e Ve ntype

forwand bas.
 nths piDCSS,
positive
onnectrd to p- tyPe and
erîal
botteyi'ss
ofthu battoy
nejative tomxral 0 n-tyR
dt acts as onducitor in towvaid bias. he
nogtitude
ef aurert deperds on the aplied torn voltage.

keve1seBia9
such a drecton thot e
Basing trs junction.in
the poterstial bamer and
exter ral vo tage mcteases
alled vevErSe bosing
prCvernts the aternt fow is

Inthispoe,positiue tvnínal
of the barttay is conreciteal to
n-typc and neqative rmival
irsulator Unaia Seo
to p-type. It acts cs
n revers bias.n his

pOCe6s barnier stergthen

t and he resulting baio o e e |00o O
offers igh resstane t

the Cunent ard prevents Pbpeve tve ntype

a r i e r t in he
the flow of
Cirauit
 ApplicaTtics_ cfprncloce
P-ncliocdes are SEd:
n ve ltage iegulattr5.
i n vo tage multiplievs
ai asrectifias in RC pcwer Su pplies
ninectcton and dencdulatiorn ciraits
i n aopurtos. 1ndios, ladars,.ctc. torwave shang
-in clompîng chats of TVreccivers
irLoser diocks aie usd n qptial communications
iLars Switches n díortal logic cicuits
b) LEDs e used in dioftal dtsplaye
LeDs ave used in decoictive lightng awangemeris.

hineiple ot Diederis aKectfler

Kectifier diods is a semicornductor devia that
connetts altnating airkent whích periodially
reveies divec tion to divection arent richfous
in only one ditection. Rectification is the convesicy
of A.C o D.C
This rEctiticarti0n can be doe by
1tlalf Nave rectiier and
Tll- ave ectifier.

itiittitt
 initiig Lpds LED
Wokirg incplc of Light
Dodo lLEDJs light aemittin
srall
Light Emitting im dilfeiert
dcviaz which ís apabe ofen
itting light
emíts lhght wha
olouis. H i5a pnjunctioh diode that
is applied to.fts leads. Thís deviae
a 5uitabe voltage
works on he prirdiple of ceatoluminesenCe
move Refective
Wlhen tlee ekhons
PoR
acto55 the p-hjuriction Cnsy Seniconluro

ie
diode an fall to 8Wirgbond

Leod
cmpty
hoes
P-type reGan, -tcie
în the
bstion
flatspot
elcctins dhoptoimthe Cothonl
conductionbard T0a
Anoolc

lower Obrtal. tera,

In the torm of photong.
the ekchpns velaE ehagY
the YP b é tnires he tiequeay
The 6ize tt aregI
The tiequienayof photon de tmines
of the ploton.
the olbur of the llgt
Nake:
Galliuim-fisenice-hosphoTUS pioddCS Red eel or
ejelow light
Caallia-phosphortvs picdu'
rEdor gieeylight
GallGall fumthr5e ict picducrsintiocd tight
 Advartagesof LEDs:
. y aie Simallin size and lgnt n vEWeIgL

2huy er teqive vey low vo tage and currer

h e y do not ncd any warm p time

4 hey vespanse tíe 5 veiy les)

5hey aan have a long he Sparn

6 hey qeneiate veny tte heat

. hey Ht mot eastly mto moden electiomc
áiauits.

worki pncipe pf Splar a

olar cell is an elkctonic devie which whves

lit eneigy cliectly îito electicil eneigy. It works

of vo tac offect and hene it
on-the píncipk phosto
6.also called photoucltalc all
isbasicelly a pn junction diode. The u Pperlaye
r

s n-tupe and-thin The lower layer is p-type ancd

thick. here are electrodes on both ptype ahd n-typc

layos ront Electric

Electon wdPhgton Contoct
n-type
ON DeplethonZ0he
-phype

Electon-1loleBh Electrical
omption Contact
Ihe ciffeuson ceates depletiovn of dections and
a

hc Chectes a depetíon zerereqiononeithersick

of he junction.
When solar cell,s expoSecd to sunlignt photors
alls on thu rtype layer and iench the depetion
o n aroUnd the junction. Thest photor6 are
abeotbed in te deple thHo n reqíon and a lage
nunber of electron-hok paîrs ais Created. The detno
field acto55 the depletion) teqjo) forces the electrons
gerneicntcd oy light to pass cosi ly to the n-side.
the
ames to p-Side.
The holes in tho depetion tegion
reated fiee elkctiors and holeS
lhese rewly
nntt ee CIOoD, Ve junction because ot pontia)
1he negortive chargs ehue to
barner. Jn tns vay.
is tiapped tOpass
the light erencatrd elkctions
on n-sidle and the positive chaige due to de
holes 'i3 tiCppeel orn.p-sidk of
lght geneiated
heve wil be a pottól
the p-n junction.
betweern tese wd sioes ond the solar
iffevence
mal batteny.
cell behaves like a