Professional Documents
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M. K. JAYARAJ
Cochin University of Science and Technology, Kochi, India;
University of Calicut, Malappuram, India
SUBHA P. P.
Cochin University of Science and Technology, Kochi,
Kerala, India
SHIBI THOMAS
Department of Physics, Bharata Mata College,
Thrikkakara, Kochi, India
Elsevier
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ISBN: 978-0-12-824008-3
Contents
Contributors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .xi
Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xv
Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 331
Contributors xi
Contributors
M. Alonso Cotta
Instituto de FÃsica Gleb Wataghin, Universidade Estadual de Campinas,
13083-859 Campinas, São Paulo, Brazil.
R. Anjana
Cochin University of Science and Technology, Kochi, India; Department of
Physics, St. Albert’s College (Autonomous), Ernakulam, India
K.S. Anju
Cochin University of Science and Technology, Kochi, India
A.S. Asha
Cochin University of Science and Technology, Kochi, India; Centre of
Excellence in Advanced Materials, Cochin University of Science and
Technology, Kochi, India
P.A. Aswathy
Cochin University of Science and Technology, Kochi, India; Department of
Physics, St. Stephen’s College, Kollam, India
Maneesh Chandran
Department of Physics, National Institute of Technology Calicut, Calicut,
India
A. Irzhak
Institute of Microelectronics Technology, Russian Academy of Sciences,
Chernogolovka, 142432, Russia
M.K. Jayaraj
Cochin University of Science and Technology, Kochi, India; University of
Calicut, Malappuram, India
V. Koledov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian
Academy of Sciences, Moscow, Russia
T.K. Krishnapriya
Cochin University of Science and Technology, Kochi, India
P. Lega
Magnetic Phenomena Laboratory, Kotelnikov Institute of Radio
Engineering and Electronics, Russian Academy of Sciences, Mokhovaya
11-7, 125009, Moscow, Russia
P.S. Midhun
Cochin University of Science and Technology, Kochi, India
xii Contributors
A.M.V. Mohan
Electrodics & Electrocatalysis Division, CSIR-Central Electrochemical
Research Institute (CECRI), Karaikudi, India
P. Mymoona
Electroplating and Metal Finishing Division (EMFD), Council of Scientific
and Industrial Research (CSIR)-Central Electrochemical Research Institute
(CECRI), Karaikudi, India; Academy of Scientific and Innovative Research
(AcSIR)-CSIR, Ghaziabad, India
Subha P.P.
Department of Physics, Cochin University of Science and Technology,
Kochi, Kerala, India
M.J. Priya
Centre of Excellence in Advanced Materials, Cochin University of Science
and Technology, Kochi, Kerala, India
Biji Pullithadathil
Nanosensor Laboratory, PSG Institute of Advanced Studies, Coimbatore,
India
K.K. Rajeev
Department of Instrumentation, Cochin University of Science and
Technology, Kochi, India; Centre of Excellence in Advanced Materials,
Cochin University of Science and Technology, Kochi, India
J.V. Rival
Smart Materials Lab, Department of Nanoscience and Technology,
University of Calicut, Kerala, India
K.J. Saji
International School of Photonics, Cochin University of Science and
Technology, Kochi, India; Centre of Excellence in Advanced Materials,
Cochin University of Science and Technology, Kochi, India
V. Sampath
Indian Institute of Technology Madras, Chennai-600 036, India
Manu Shaji
Cochin University of Science and Technology, Kochi, India
E.S. Shibu
Smart Materials Lab, Department of Nanoscience and Technology,
University of Calicut, Kerala, India
Z. Song
International Research Centre for Nano Handling & Manufacturing of
China, Changchun University of Science and Technology, Changchun
130022, China
A.M. Starvin
Department of Chemistry, Christian College, Kattakada,
Thiruvananthapuram, India
Contributors xiii
P.S. Subin
Centre of Excellence in Advanced Materials, Cochin University of Science
and Technology, Kochi, Kerala, India
Navami Sunil
Nanosensor Laboratory, PSG Institute of Advanced Studies, Coimbatore,
India
Shibi Thomas
Department of Physics, Bharata Mata College, Thrikkakara, Kochi, India
S. von Gratowski
Laboratory of Spectroscopy and Millimeter and Submillimeter Wave
Measurements, Kotelnikov Institute of Radio Engineering and Electronics,
Russian Academy of Sciences, Fryazino Branch, FIRE RAS, Vvedenski
Sq.1, Fryazino, Moscow Region, 141190, Russia
Preface xv
Preface
1.1 Introduction
Recently, nanostructured metal oxides have attracted much atten-
tion in many industrial and domestic applications for the detection
of toxic, flammable, and explosive gases due to their high sensitivity,
flexibility in production, small size, low cost, and ability to detect both
reducing and oxidizing gases (Miller et al., 2014; Wang et al., 2010). The
sensing properties of these nanomaterials strongly depend on their
size, structure, shape, surface-to-volume ratio, and physical and chem-
ical properties. With the increasing demand for selective and sensitive
gas sensors, researchers are following different strategies to improve
the gas sensing properties of the metal oxide semiconductor (MOS)–
based gas sensors, such as changing the morphology of nanostructures
(Gurlo, 2011; Shouli et al., 2010; Sun et al., 2012), noble metal dop-
ing (Luo et al., 2017; Sarkar et al., 2015), the formation of hierarchical
nanostructures (Miller et al., 2014; Walker et al., 2019), core–shell (CS)
structures (Yan et al., 2018), hollow heteronanostructures (Guo et al.,
2019), and exposing high energy crystal facets (Jia et al., 2014; Liang
et al. 2019a; Liu, et al., 2012). Among these strategies, scientists are
more interested in the development of nanostructures with selectively
exposed high-energy facets.
The numbers of dangling bonds (unsaturated bonds), number of
active site for gas adsorption, and the arrangement of surface atoms
are important factors that play a crucial role in gas sensing proper-
ties since gas sensing processes occur on the surface. Different crystal
facets with distinctive surface atomic arrangements possess different
gas sensing properties. High-energy facets possess a large number of
dangling bonds, atomic steps, and edges, which leads to more active
sites for gas adsorption; hence sensing materials exposed with high-
energy facets show greater reactivity than those exposed with the low-
energy facets (Gao & Zhang, 2018; Kuang et al., 2014; Pal & Pal, 2015;
Shang & Guo, 2015).
This chapter gives a basic idea regarding MOS-based sensors, in-
cluding their gas sensing mechanism, the design of the gas sensor, the
design of the gas sensing measurement unit, different performance
parameters, and different strategies adopted for the improvement of
the performance of MOS gas sensors. The importance of MOSs with
exposed high-energy facets in the improvement of gas sensing perfor-
mance has been discussed in detail. Also, the effects of dangling bond
density on gas sensing properties have been discussed. According to
the research and calculation, surface engineering by selectively expos-
ing high-energy facets provides an effective way to obtain MOS gas-
sensitive materials with superior performance. The understanding of
the facet-dependent properties of MOS will lead to the fabrication of
more effective gas sensors in the future.
O− − − ◦
2 (ads) + e → 2O (ads), T > 150 C (1.3)
Table 1.1 Change in the resistance of n- and p-type MOS when exposed
to reducing and oxidizing gases.
(A) (B)
1.2.4.2 Selectivity
It is the ability of a sensor to differentiate a specific target gas from
a mixture of gases. A good sensor will detect a particular gas while
remaining insensitive to other gases. The selectivity coefficient (K) of
a gas sensor can be written as
SI
K= (1.7)
SII
where SI and SII are the sensing responses of the sensor toward two
different gases, I and II, respectively.
1.2.4.3 Stability
Stability is defined as the reproducibility of the device in the sensing
measurement after long use. To avoid the effects of nonrepeatability
8 Chapter 1 Facet-dependent gas sensing properties of metal oxide nanostructures
recovery times and lower the operating temperature (Luo et al., 2017).
Also, they can produce more active sites on the surface. Analyte gas
can be adsorbed on the noble metal and then spilled into the MOS.
For example, noble metals can dissociate H atom from H2 , which then
spills over and is adsorbed on the surface of metal oxide, as shown
in Fig. 1.9. The role of a noble metal is to bring down the reaction
activation energy. Generally, the work function of noble metals is more
than that of semiconductors; hence the Fermi level of a noble metal lies
below that of MOS. Due to the work function difference, the electrons
from the semiconductor flow into the noble metals to equal the Fermi
levels, as shown in Figs. 1.9 and 1.10. This electron transfer generates
the Schottky barrier at the interface and energy bands in the MOS are
bent upward due to positive charge, which makes the material more
sensitive to analyte gases, as shown in Fig. 1.10 (Degler et al., 2019;
Sarkar et al., 2015).
The sources whence cerebral emboli may spring are various, but
cannot be found outside a certain range. They may, in the first place,
be torn off from vegetations upon either the mitral or aortic valves;
and this source is probably the most common. The appendix of the
left auricle may furnish a plug from the thrombi formed among its
trabeculæ, or the aorta from an aneurism or from parietal thrombi
formed, upon spots roughened by atheroma. The pulmonary veins
are occasionally the source of the embolus, though this is not very
common.
It is rather doubtful whether an embolus can find its way from the
systemic veins through the lungs to the brain, but it is possible that
small emboli may do so, and increase in size from the addition of
fresh fibrin when floating in the blood-current. The occurrence of
pyæmic abscesses in the brain would suggest the possibility of this,
though it is, on the other hand, possible that the brain abscesses are
secondary to older ones in the lungs. In some cases, however, a
careful examination does not disclose the source of the embolus.
The anterior portion of the brain, including the anterior and posterior
central convolutions and the first temporal, are supplied with blood
by the two terminal branches of the internal carotid, the anterior and
middle cerebral, the ganglia underlying these portions of the cortex
being supplied, as already stated, by small branches arising near the
origin of these two trunks, and principally the second. The anterior
cerebrals of the two sides are connected by the anterior
communicating, which is a short and usually wide vessel. Sometimes
one anterior cerebral branches in the longitudinal fissure, and
supplies a part of both sides. Hence in plugging of one internal
carotid which does not reach its bifurcation a collateral supply may
be received from the other side. If, however, an embolus or thrombus
has penetrated beyond the origin of the middle cerebral, this vessel
can no longer receive a supply from the anterior.
When the large trunks leave the circle of Willis to be distributed upon
the surface of the brain, after giving off from the first centimeter or
two of their course the nutrient arteries for the deep-seated ganglia,
they break up into several branches which ramify upon the surface,
but, as Duret has shown, undergo very few anastomoses. Instead of
forming, as was once supposed, a richly inosculating network, small
branches penetrate into the brain-substance perpendicularly from
the superficial vessels, but these do not communicate freely with
each other by vessels larger than capillaries.
From these anatomical conditions it happens that when a vascular
territory is deprived of its normal supply by an embolus, it cannot be
supplied with blood from surrounding districts. A certain limited
amount of collateral supply is possible through the capillaries and the
rare anastomoses, but it is only around the edges, and the centre of
the territory becomes destitute of circulating blood. Thus an embolus
does not in the brain produce, as it does in other organs with more
abundant collateral supply, a large hemorrhagic infarction.
The change produced in the cerebral substance from cutting off its
supply of blood is known as anæmic necrosis, and includes what has
been known as white softening, with probably some yellow, and
possibly a little red softening, the latter in case where simple
softening has been complicated by hemorrhage.
When the circulation ceases the substance that should have been
nourished loses its firmness and acquires a custard-like consistency.
The gray and white substances are no longer so distinct in
appearance, the latter losing its milky-white color, the whole surface
of a section becoming of a dirty yellowish-white, somewhat shining,
and looking as if it contained more moisture than normal. When a
considerable portion of the interior of the hemisphere is thus
affected, the brain outside, with its membranes, bags down, looks
swollen, and feels to the fingers as if there were present a sacful of
fluid. The boundaries of such an area of softening are marked off
from the healthy substance with some distinctness, though less than
that of a hemorrhage. There may be some hemorrhage around the
edges or into the cavity, so that the presence of a little blood-pigment
is no proof that the original lesion was not softening from occlusion.
In the further progress the contents of the cavity become more fluid,
and finally a somewhat distinct cyst is formed, not unlike that from a
hemorrhage, with an internal areolar structure from the remains of
connective tissue, and contents of a slightly yellowish or brownish
color, or often of a chalky white. These cysts have little to distinguish
them, when old, from similar ones left by hemorrhage, except the
much greater amount of pigment in the latter. The smaller spots of
softening may after a time lose their fluidity, and remain as yellowish
patches as firm as, or firmer than, the surrounding brain. The region
of the brain involved becomes atrophied, the convolutions shrink,
and the membranes become filled with serous fluid, to compensate
for the sinking of the surface.
What has just been written applies to the simple mechanical action
of emboli. If, however, they have a septic origin, as notably in cases
of ulcerative endocarditis, the region in which they lodge becomes,
instead of a simple spot of necrosis, a septic focus or abscess, with
its results of compression or irritation. In such a case there are likely
to be abscesses of similar origin in other organs, and the cerebral
lesion is only a part of the general pyæmic condition.
The same authors also speak of less defined symptoms, like delirium
and stupor, occurring among the inhabitants of the Salpêtrière (old
women), with intervals of comparative health, as being premonitory.
The annexed chart is from a man (W. I. W.) who was in the hospital
with ill-defined nervous symptoms, and was suddenly attacked with
convulsions, vomiting, and unconsciousness. He had a small tumor
at the point of the right temporal lobe, and softening of the left corpus
striatum. The apoplectic symptoms occurred on the 15th—that is, as
will be seen by the chart, one day after the temperature began to
rise. The pulse and respiration show no characteristic changes.
FIG. 40.
It is much more common for the embolus or thrombus to give rise to
a set of symptoms less severe than a fully-developed apoplectic fit.
During such a fit—or, more clearly, as it is passing off—we find more
or less marked paralytic symptoms, but these are quite as frequently
present without the loss of consciousness. The patient states that he
waked up and found one side of his body helpless, or that he was
reading the paper when it fell from his hand, and upon trying to walk
found that he could not do so. Loss of speech may be an initial
symptom. It has been spoken of as premonitory, but it is probable
that it is in reality only the beginning, which, in some cases may go
no farther, but is usually succeeded by more extensive paralysis,
which makes its meaning unmistakable. These symptoms may be
hours or even days in developing, with occlusion as well as with
hemorrhage. Very slight attacks may occur which hardly excite
attention, and lesions are found after death in many cases to which
there is nothing in the history to correspond.
Improvement may begin very rapidly in some cases where the lesion
is small, a sufficient amount of collateral circulation being developed
to prevent the structure from being disorganized. In others a
specially favorable anastomosis may preserve even a larger area,
but in others still it is not easy to account on entirely anatomical
grounds for the amount of improvement which takes place.
Trousseau cites the case of Lordat, who became aphasic, and after
recovery described his own case. The learned professor claims to
have been in full possession of his faculties, and to have arranged a
lecture with the divisions and subdivisions of the subject, and all this
without the thought of a single word passing through his mind.
Trousseau ventures to doubt the possibility of carrying on
complicated mental processes without words, and thinks Lordat may
have overestimated the precision of his mental processes. It appears
in confirmation of this view that after his attack he always read his
lectures, whereas before he had been distinguished as an
extempore speaker.