5.

1

I
i I

5.2
5.1() () E
U = E

(5.1)

U = , / (m/s)
= , (m2/Vs)

1028 1
2
(mobility),
1. (mobility),
(crystalline structure)
2. ()
(resistivity)

+Q

E
+Q

()
()
5.1 () ()

 67

1. , = 0.0012 m2/Vs
2. , = 0.0032 m2/Vs
3. , = 0.0056 m2/Vs

5.3 (Current and Conduction Current Density, J)

(conduction current) I 1
( ) 1 1
dQ
I
(5.2)
dt
(5.3)
J = U
( A/m2)

(5.3)

= , /. (C/m3)
(convection current)
(current density) J ( 5.2 )
(5.1) (5.3)
J = E
(5.4)
(conductivity)
J = E
E
I = JS

= S

()
E
E =V/L

E
L

5.2 S
=

(5.5)

J = E

(5.6)

(5.5) (5.4)
= , / (S/m) ( = 5.8 107 S/m
= 3.82 107 S/m)
5.2 I
S

68

I = JS

(5.7)

S
I S J dS

(5.8)

5.4 (Convection Current Density J)

v U 5.3
S (convection current)
J = U (5.3)

J = U

5.3

5.2 2
J = 103e- 400r (A/m2) I

(5.7)
I S J dS S J dS
dS r dr d

2 0.002

I 0 0

10e -400r rdr d

0.002

e -400r

10
2 (-400r - 1)
(-400)
0
= 7.51 mA

02

5.5 (Current Sheet Density K)

(waveguide)
K ( A/m)

 69

5.4 I r z

I
K
az
( A/m)
(5.9)
2 r
z
r

5.4
z

K
0.05 m
x

5.5 5.3

C K

I C K n dl
(5.10)
5.3 z = 0 0 < x < 0.05 ay 25
x = 0 x = 0.05 x
= 0.025 ( 5.5) K

K = (k sin 20x)ay (A/m)

70

0.05

I 25 K y dx k 0 sin 20 x dx
0.05

cos20 x
25 k
20 0
k
25
10
k = 250 /

5.6 (Conductors and Conductivity)

(conduction electrons)

5.6
5.6()
5.6() (5.11) (5.12)
(electron) (hole)
:
:

= _ _ + + +

(5.11)

= e e

(5.12)

5.6.1 (Metallic Conductors)

5.2
a

Vab b dL E b dL E L E L ab
ba

(5.13)

V = EL
J = I/S = E (5.14) J
V
J
L

(5.14)

(5.15)

L
I
S

(5.16)

 71

J
E

+
-

+
-

J
E

()
()
()
5.6 () () ()

V = IR (5.16)

L
S

(5.17)

5.5 AWG # 12 80.8 () 50 50

(E), (U), (V),
(R)

S S = r2 1 mil = 1/1000 in
2

0.0808 in 2.54 10 - 2 m
3.31 10 - 6 m 2
S

1 in
2

(5.7)
I
20 A
= 6.04 x 106 A/m2
J =
6
2
S 3.31 10 m
(5.6) = 5.8 107 S/m

J 6.04 10 6 A/m 2
= 1.04 x 10-1 V/m
E =
7

5.8 10 S/m
0.104 V/m

(5.14)
V = EL = (0.104 V)(50 foot)(12 in/foot)(0.0254 m/in) = 1.59 V
1.59

V 1.59 V

79.5 m
I 20 A
79.5
R

(5.5)
5.8 10 7 S/m

1.81 1010 C/m 3

2
0.0032 m / V s
18.1 GC/m3

72

(5.3)

J 6.05 10 6 A/m 2
U
3.34 10 -4 m/s
10
3
1.81 10 C/m
AWG # 12 30 /

5.4 AWG # 16 1.291 10-3

1

1.291 10 -3
1.308 10 -6 m 2
S r

(5.18)
L
1,609 m
R
21.2
S (5.8 10 7 S/m)(1.308 10 -6 m 2 )
21.2
2

5.6.2 (Semiconductors)

[ 5.6() ]

(donor) n
(acceptors) p (doping)

(5.18)
= e e + h h

(5.18)

:
:

= 0.12 m2/Vs = 0.025 m2/Vs

= 0.36 m2/Vs = 0.17 m2/Vs

( 300 K)

5.6

300 K 2.5 1019 /.

e = 0.36 m2/Vs h = 0.17 m2/Vs

= Nee(e + h) = (2.5 1019)(1.6 10-19)(0.36 + 0.17) = 2.12 S/m

= 2.12 S/m

 73

5
1
1. ....................................................

2. ...........
3. ........... (/)
4. ...................................................
5. ...................................................
.....................
6. (I) ..................... .....................
7. .....................
.....................
8. .....................
9. ..........................................
10. .................... ................... ................
2
1. 20
4
2. 5.3
10-4 /
3. 2 r J
= 103/r /.
4. J = 10e 100r a /. 0.01 r 0.02 , 0 < z 1
=
5. I (A) z z = 5 10 2 0 /4
5 K
6. 0.02 0.08 2 . 50

7. 0.01 0.07 3 300

8. AWG #20 5.19 10-7 16.7 /305

9. AWG #4/0 10 AWG # 4/0
1.07 10-4
10. (Nh) p = 104 /
h = 0.18 m2/Vs