PD - 97210

IRGP4063DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology C
• Low switching losses
VCES = 600V
• Maximum Junction temperature 175 °C
IC = 48A, TC = 100°C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
G tSC ≥ 5µs, TJ(max) = 175°C
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode E VCE(on) typ. = 1.65V
• Tight parameter distribution n-channel
• Lead Free Package

Benefits
• High Efficiency in a wide range of applications C
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses E
• Rugged transient Performance for increased reliability C
G
• Excellent Current sharing in parallel operation
• Low EMI
TO-247AC

G C E
Gate Collector Emitter

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 96
IC @ TC = 100°C Continuous Collector Current 48
ICM Pulse Collector Current 192
ILM Clamped Inductive Load Current c 192 A
IF @ TC = 25°C Diode Continous Forward Current 96
IF @ TC = 100°C Diode Continous Forward Current 48
IFM Diode Maximum Forward Current e 192
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 330 W
PD @ TC = 100°C Maximum Power Dissipation 170
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––

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IRGP4063DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 150µA f CT6
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6

— 1.65 2.14 IC = 48A, VGE = 15V, TJ = 25°C 5,6,7

VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C 9,10,11

— 2.05 — IC = 48A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA 9, 10,
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12

gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80µs

ICES Collector-to-Emitter Leakage Current — 1.0 150 µA VGE = 0V, VCE = 600V
— 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A 8

— 1.45 — IF = 48A, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) — 95 140 IC = 48A 24

Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V

Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT4

Eoff Turn-Off Switching Loss — 1275 1481 µJ RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 1900 2622 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT4

tr Rise time — 40 56 ns RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C

td(off) Turn-Off delay time — 145 176
tf Fall time — 35 46
Eon Turn-On Switching Loss — 1625 — IC = 48A, VCC = 400V, VGE=15V 13, 15

Eoff Turn-Off Switching Loss — 1585 — µJ RG=10Ω, L=200µH, LS=150nH, TJ = 175°C f CT4

Etotal Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14, 16

tr Rise time — 45 — ns RG = 10Ω, L = 200µH, LS = 150nH CT4

td(off) Turn-Off delay time — 165 — TJ = 175°C WF1

tf Fall time — 45 — WF2

Cies Input Capacitance — 3025 — pF VGE = 0V 23

Coes Output Capacitance — 245 — VCC = 30V

Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz
TJ = 175°C, IC = 192A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 10Ω, VGE = +15V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 22, CT3

Rg = 10Ω, VGE = +15V to 0V WF4

Erec Reverse Recovery Energy of the Diode — 845 — µJ TJ = 175°C 17, 18, 19

trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A 20, 21

Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10Ω, L =200µH, Ls = 150nH WF3

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
‚ This is only applied to TO-247AC package.
ƒ Pulse width limited by max. junction temperature.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

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 IRGP4063DPbF
100 350
90
300
80
70 250

60
200

Ptot (W)
IC (A)

50
40 150

30 100
20
50
10
0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 1000

100 10µsec

100µsec 100
IC (A)

IC (A)

10 1msec

DC 10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V TJ = 175°C; VGE =15V

200 200

180 180

160 VGE = 18V 160

VGE = 18V
VGE = 15V
140 140 VGE = 15V
VGE = 12V
VGE = 10V VGE = 12V
120 120 VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)

100 100 VGE = 8.0V

80 80

60 60

40 40

20 20

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs

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IRGP4063DPbF
200 200
180 VGE = 18V 180
VGE = 15V
160 VGE = 12V 160
VGE = 10V
140 140
VGE = 8.0V -40°c
120 120 25°C
ICE (A)

175°C

IF (A)
100 100
80 80
60 60
40 40
20 20
0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs tp = 80µs
20 20
18 18
16 16
14 14
12 ICE = 24A 12 ICE = 24A
VCE (V)

VCE (V)

10 ICE = 48A 10 ICE = 48A

ICE = 96A ICE = 96A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 200
18 180
T J = 25°C
16 160 T J = 175°C
14 140
12 ICE = 24A 120
VCE (V)

ICE (A)

10 ICE = 48A 100

ICE = 96A
8 80
6 60
4 40
2 20
0 0
5 10 15 20 0 5 10 15
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 10µs

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 IRGP4063DPbF
6000 1000

5000
EOFF

Swiching Time (ns)

4000 tdOFF
Energy (µJ)

3000 EON 100

tdON
2000 tF
tR
1000

0 10
0 50 100 150 0 20 40 60 80 100
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
5000 1000

4500 tdOFF
EOFF
4000
Swiching Time (ns)
EON tR
3500
Energy (µJ)

tdON
3000 100
tF
2500

2000

1500

1000 10
0 25 50 75 100 125 0 25 50 75 100 125
RG (Ω)
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
45 45

40
40
RG = 10Ω
35
35
30
RG = 22Ω 30
25
IRR (A)

IRR (A)

20 RG = 47Ω 25
15
RG = 100Ω 20
10
15
5

0 10
0 20 40 60 80 100 0 25 50 75 100 125
IF (A) RG (Ω)

Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C

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IRGP4063DPbF
45 4000

40 3500
96A
35
3000
48A 10Ω

QRR (µC)
30
IRR (A)

2500
100Ω
25 22Ω
47Ω
2000 24A
20

1500
15

10 1000
0 200 400 600 800 1000 0 500 1000 1500
diF /dt (A/µs) diF /dt (A/µs)

Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C

900 18 400

800 RG = 10Ω 16 350

700
14 300
600 RG = 22Ω
Energy (µJ)

Current (A)
Time (µs)

500 12 250

400 RG = 47Ω 10 200

300
8 150
200 RG = 100Ω
6 100
100

0 4 50
0 20 40 60 80 100 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 25°C
10000 16

Cies 14 V CES = 300V

VGE, Gate-to-Emitter Voltage (V)

V CES = 400V
12
1000
Capacitance (pF)

10

8
Coes
6
100
4
Cres
2

10 0
0 20 40 60 80 100 0 25 50 75 100
VCE (V) Q G, Total Gate Charge (nC)

Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 48A; L = 600µH

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 IRGP4063DPbF

D = 0.50
Thermal Response ( Z thJC )

0.1 0.20
0.10
0.05
R1 R2 R3
0.02 R1 R2 R3 Ri (°C/W) τi (sec)
0.01 τJ
0.01 τJ
τC
τ 0.0872 0.000114
τ1 τ2 τ3
τ1 τ2 τ3 0.1599 0.001520
SINGLE PULSE Ci= τi/Ri 0.2020 0.020330
Ci i/Ri
0.001 ( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1
Thermal Response ( Z thJC )

D = 0.50
0.20
0.1 0.10
0.05 R1 R2 R3
R1 R2 R3 Ri (°C/W) τi (sec)
0.02 τJ
0.01 τJ
τC
τ
0.2774 0.000908
0.01 τ1 τ2 τ3
τ1 τ2 τ3 0.3896 0.003869
Ci= τi/Ri 0.2540 0.030195
Ci i/Ri
0.001 SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4063DPbF

L
VC C 80 V DU T
D UT 4 80V
0
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

d io d e clamp /
DU T
L

4x
- 5V
DC 360V
DU T /
DUT D RIVER VCC
Rg

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC C force
R=
ICM
400µH
D1 10K
C sense

DUT VCC
G force DUT 0.0075µ
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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 IRGP4063DPbF

700 140 600 120

600 120 500 100

500 100 tr
400 80

400 80 TEST
tf 300 CURRE 60
VCE (V)

VCE (V)
90% test
300 60
90% ICE
200 40
200 40 10% test
5% VCE
100 20
100 20 5% VCE
5% ICE

0 0 0 0
EOFF Loss EON
-100 -20 -100 -20
-0.40 0.10 0.60 1.10 6.20 6.40 6.60 6.80 7.00
Time(µs) Time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

60 600 600

50
500 500
40 ICE
VCE
QRR
30 400 400

20 tRR
300 300
VCE (V)

ICE (A)
IRR (A)

10

0
200 200

-10 10%
Peak 100 100
Peak
-20 IRR IRR
0 0
-30

-40 -100 -100

-0.15 -0.05 0.05 0.15 0.25 -5.00 0.00 5.00 10.00
time (µS) time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 25°C using Fig. CT.3

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IRGP4063DPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

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TO-247AC package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/06

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